1. product pro?le 1.1 general description 45 w ldmos power transistor for base station applications at frequencies from 800 mhz to 1000 mhz. [1] test signal: 3gpp; test model 1; 64 dpch; par = 7.5 db at 0.01 % probability on ccdf per carrier; carrier spacing 5 mhz 1.2 features n typical 2-carrier w-cdma performance at frequencies of 920 mhz and 960 mhz, a supply voltage of 28 v and an i dq of 350 ma: u average output power = 1.0 w u gain=23db u ef?cienc y=8% u acpr = - 48.5 dbc n easy power control n integrated esd protection n excellent ruggedness n high ef?ciency n excellent thermal stability n designed for broadband operation (800 mhz to 1000 mhz) n internally matched for ease of use n compliant to directive 2002/95/ec, regarding restriction of hazardous substances (rohs) BLF6G10S-45 power ldmos transistor rev. 02 10 february 2009 product data sheet table 1. typical performance rf performance at t case = 25 c in a common source class-ab production test circuit. mode of operation f v ds p l(av) g p h d acpr (mhz) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 920 to 960 28 1.0 23 8 - 48.5 [1] caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling.
BLF6G10S-45_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 10 february 2009 2 of 10 nxp semiconductors BLF6G10S-45 power ldmos transistor 1.3 applications n rf power ampli?ers for w-cdma base stations and multi carrier applications in the 800 mhz to 1000 mhz frequency range. 2. pinning information [1] connected to ?ange 3. ordering information 4. limiting values 5. thermal characteristics table 2. pinning pin description simpli?ed outline symbol 1 drain 2 gate 3 source [1] 1 2 3 sym112 1 3 2 table 3. ordering information type number package name description version BLF6G10S-45 - ceramic earless ?anged package; 2 leads sot608b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage - 0.5 +13 v i d drain current - 13 a t stg storage temperature - 65 +150 c t j junction temperature - 225 c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-case) thermal resistance from junction to case t case =80 c; p l = 12.5 w 1.7 k/w
BLF6G10S-45_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 10 february 2009 3 of 10 nxp semiconductors BLF6G10S-45 power ldmos transistor 6. characteristics 7. application information 7.1 ruggedness in class-ab operation the BLF6G10S-45 is capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 350 ma; p l = 35 w (cw); f = 960 mhz. table 6. characteristics t j = 25 c per section; unless otherwise speci?ed. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 0.5 ma 65 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 72 ma 1.35 1.9 2.35 v v gsq gate-source quiescent voltage v ds =28v;i d = 430 ma 1.7 2.15 2.7 v i dss drain leakage current v gs =0v; v ds =28v - - 1.4 m a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v - 12.5 - a i gss gate leakage current v gs = 11 v; v ds = 0 v - - 140 na g fs forward transconductance v ds =10v; i d = 3.6 a - 5 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 2.52 a - 0.2 - w table 7. application information mode of operation: 2-carrier w-cdma; par 7.5 db at 0.01 % probability on ccdf; 3gpp test model 1; 1-64 pdpch; f 1 = 922.5 mhz; f 2 = 927.5 mhz; f 3 = 952.5 mhz; f 4 = 957.5 mhz; rf performance at v ds =28v; i dq = 350 ma; t case =25 c; unless otherwise speci?ed; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) = 1.0 w 21.8 23 24.5 db rl in input return loss p l(av) = 1.0 w 5.5 9 - db h d drain ef?ciency p l(av) = 1.0 w 7 8 - % acpr adjacent channel power ratio p l(av) = 1.0 w - - 48.5 - 45.5 dbc
BLF6G10S-45_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 10 february 2009 4 of 10 nxp semiconductors BLF6G10S-45 power ldmos transistor v ds = 28 v; i dq = 350 ma; f = 960 mhz. fig 1. one-tone cw power gain and drain ef?ciency as functions of load power; typical values v ds = 28 v; i dq = 350 ma; f 1 = 960 mhz; f 2 = 960.1 mhz. v ds =28v; i dq = 350 ma; f 1 = 960 mhz; f 2 = 960.1 mhz. fig 2. two-tone cw power gain and drain ef?ciency as functions of peak envelope load power; typical values fig 3. intermodulation distortion as a function of peak envelope load power; typical values p l (w) 050 40 20 30 10 001aaf991 g p 19 21 17 23 25 g p (db) 15 h d 30 45 15 60 75 h d (%) 0 p l(pep) (w) 080 60 20 40 001aaf992 19 21 17 23 25 g p (db) 15 25 40 10 55 70 h d (%) - 5 g p h d p l(pep) (w) 080 60 20 40 001aaf993 - 60 - 30 0 imd (dbc) - 90 imd7 imd5 imd3
BLF6G10S-45_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 10 february 2009 5 of 10 nxp semiconductors BLF6G10S-45 power ldmos transistor 8. test information v ds = 28 v; i dq = 350 ma; f 1 = 952.5 mhz; f 2 = 957.5 mhz; carrier spacing 5 mhz. (1) f = 955 mhz (2) f = 925 mhz v ds =28v; i dq = 350 ma; carrier spacing 5 mhz. (1) f = 955 mhz (2) f = 925 mhz fig 4. 2-carrier w-cdma power gain and drain ef?ciency as functions of average load power; typical values fig 5. 2-carrier w-cdma adjacent channel power ratio as function of average load power; typical values p l(av) (dbm) 20 36 32 24 28 001aaf994 g p 21 19 23 25 g p (db) 17 h d 8 4 12 16 h d (%) 0 (2) (1) (1) (2) p l(av) (dbm) 20 36 32 24 28 001aaf997 - 50 - 55 - 45 - 40 acpr (dbc) - 60 (2) (1) fig 6. test circuit for operation at 900 mhz 001aaf995 c9 r1 r3 r2 f1 c11 c12 c13 c14 c15 c16 c10 c1 c2 c3 c4 c6 c5 c7 c8 v gs v ds output 50 w input 50 w
BLF6G10S-45_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 10 february 2009 6 of 10 nxp semiconductors BLF6G10S-45 power ldmos transistor [1] american technical ceramics type 100b or capacitor of same quality. [2] tdk or capacitor of same quality. the striplines are on a double copper-clad taconic rf35 printed-circuit board (pcb) with e r = 3.5 and thickness = 0.76 mm. see t ab le 8 for list of components. fig 7. component layout for 920 mhz and 960 mhz test circuit for 2-carrier w-cdma table 8. list of components (see figure 6 and figure 7 ). all capacitors should be soldered vertically. component description value remarks c1 multilayer ceramic chip capacitor 3.0 pf [1] c2 multilayer ceramic chip capacitor 1 pf [1] c3 multilayer ceramic chip capacitor 6.2 pf [1] c4 multilayer ceramic chip capacitor 1.8 pf [1] c5 multilayer ceramic chip capacitor 1.0 pf [1] c6 multilayer ceramic chip capacitor 6.8 pf [1] c7 multilayer ceramic chip capacitor 6.8 pf [1] c8, c11, c14 multilayer ceramic chip capacitor 68 pf [1] c9, c10, c12, c13 multilayer ceramic chip capacitor 330 nf; 50 v [2] c15 multilayer ceramic chip capacitor 4.5 m f; 50 v [2] c16 electrolytic capacitor 220 m f f1 ferrite smd bead - ferroxcube bds 3/3/8.9-4s2 or equivalent q3 BLF6G10S-45 - r1 smd resistor 4.7 w ; 0.1 w r2 smd resistor 6.8 w ; 0.1 w 001aaf996 c1 c8 c2 c3 c4 c10 BLF6G10S-45 inputboard tp BLF6G10S-45 outputboard tp c11 c12 c13 c15 c14 c5 c6 c7 f1 c16 - + c9 r1 r2
BLF6G10S-45_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 10 february 2009 7 of 10 nxp semiconductors BLF6G10S-45 power ldmos transistor 9. package outline fig 8. package outline sot608b references outline version european projection issue date iec jedec jeita sot608b sot608b 06-11-27 06-12-06 unit a mm 4.62 3.76 7.24 6.99 0.15 0.10 10.29 10.03 10.21 10.01 10.29 10.03 1.14 0.89 1.70 1.35 10.24 9.98 0.51 b dimensions (mm dimensions are derived from the original inch dimensions) ceramic earless flanged package; 2 leads 0 5 mm scale c d 10.21 10.01 d 1 e e 1 f h 15.75 14.73 q u 1 u 2 10.24 9.98 inch 0.182 0.148 0.285 0.275 0.006 0.004 0.405 0.395 0.402 0.394 0.405 0.395 0.045 0.035 0.067 0.053 0.403 0.393 0.020 0.402 0.394 0.620 0.580 0.403 0.393 w 1 m w 1 a m 1 2 b h a 3 d a f d 1 u 1 e e 1 u 2 c q
BLF6G10S-45_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 10 february 2009 8 of 10 nxp semiconductors BLF6G10S-45 power ldmos transistor 10. abbreviations 11. revision history table 9. abbreviations acronym description 3gpp 3rd generation partnership project ccdf complementary cumulative distribution function cw continuous waveform dpch dedicated physical channel ldmos laterally diffused metal oxide semiconductor par peak-to-average power ratio pdpch transmission power of the dedicated physical channel rf radio frequency smd surface-mount device vswr voltage standing-wave ratio w-cdma wideband code division multiple access table 10. revision history document id release date data sheet status change notice supersedes BLF6G10S-45_2 20090210 product data sheet - BLF6G10S-45_1 modi?cations: ? section 1.2 f eatures on page 1 : added rohs compliance statement BLF6G10S-45_1 20070223 preliminary data sheet - -
BLF6G10S-45_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 10 february 2009 9 of 10 nxp semiconductors BLF6G10S-45 power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 12.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 12.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 13. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors BLF6G10S-45 power ldmos transistor ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 10 february 2009 document identifier: BLF6G10S-45_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation. . . . . . . . . . 3 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 12 legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 12.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 13 contact information. . . . . . . . . . . . . . . . . . . . . . 9 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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